Ultralow-energy memory enabled by the facile oxidation of hexagonal boron nitride for charge trapping through the van der Waals gap
Jong Yun Kim†, Oh Hun Gwon†, Euiyoung Choi†, Beomkyu Shin†, Hye Ryung Byun, Seok-Ju Kang, Daehyun Ryu, Tae-In Jeong, San Kim, Seungchul Kim, Philip Kim, Han Seul Kim*, Young-Jun Yu*
